Datasheet > PTMA080302M

PTMA080302M

更新时间： 2024-10-02 06:05:47

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器功率放大器
页数	文件大小	规格书
11页	197K
描述
Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz

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中文翻译

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技术参数
数据手册

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PTMA080302M 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.67	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	31 dB
最大输入功率 (CW)：	16 dBm	JESD-609代码：	e3
最大工作频率：	1000 MHz	最小工作频率：	700 MHz
射频/微波设备类型：	WIDE BAND HIGH POWER	端子面层：	Matte Tin (Sn)
最大电压驻波比：	10	Base Number Matches：	1

PTMA080302M 数据手册

PTMA080302M

Confidential, Limited Internal Distribution

Wideband RF LDMOS Integrated Power Amplifier

30 W, 700 – 1000 MHz

Description

The PTMA080302M is a wideband, matched, 30-watt, 2-stage

LDMOS integrated amplifier intended for use in all typical modulation

formats from 700 to 1000 MHz. This device is offered in a 20-lead,

thermally-enhanced, overmolded package for cool and reliable

operation.

PTMA080302M

Package PG-DSO-20-63

Features

•

Designed for wide RF modulation bandwidths,

and low memory effects

Broadband Performance

V_DD= 28 V, I_DQ1= 120 mA, I_DQ2= 280 mA,

fixture tuned for 920 - 960 MHz

On-chip matching, integrated input DC block,

50-ohm input and ~ 8-ohm output

Typical GSM/EDGE performance, 940 MHz, 28 V

- Output power = 15 W Avg.

- Linear gain = 31 dB

- Power added efficiency = 36%

- EVM at 15 W = 1.7 %

- ACPR at 400 kHz = –61 dBc

- ACPR at 600 kHz = –73 dBc

Gain

-5

-10

-15

-20

-25

•

Typical CW performance at 940 MHz, 28 V

- Output power at P–1dB = 32 W

- Linear gain (1 W) = 31 dB

Return Loss

- Power added efficiency = 46%

•

Capable of handling 10:1 VSWR @ 28 V, 30 W

(CW) output power

700 750 800 850 900 950 1000 1050 1100

Frequency (MHz)

Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

RoHS-compliant package

RF Characteristics

GSM/EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I

= 120 mA, I

= 280 mA, ƒ = 920 to 960 MHz, P = 15 W Avg.

OUT

DQ1

DQ2

Characteristic

Symbol

Min

—

Typ

Max

—

Unit

Gain

Power-added Efficiency

Error Vector Magnitude

PAE

EVM (RMS)

—

1.7

—

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 04, 2010-04-16

12 3 4 5 6 7...11

中文翻译

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与PTMA080302M相关器件

型号	品牌	获取价格	描述	数据表
PTMA080302M-30W	INFINEON	获取价格	Wide Band Medium Power Amplifier,
PTMA080302MV1	INFINEON	获取价格	Wide Band High Power Amplifier, 700MHz Min, 1000MHz Max, 1 Func, GREEN, PLASTIC, MO-166, 2
PTMA080302MV1AUMA1	INFINEON	获取价格	Wide Band High Power Amplifier, 700MHz Min, 1000MHz Max, GREEN, PLASTIC, MO-166, 20 PIN
PTMA080304M	INFINEON	获取价格	Dual Wideband RF LDMOS Power Amplifier 30 W, 700-1000 MHz
PTMA180152M	INFINEON	获取价格	Narrow Band High Power Amplifier, 1800MHz Min, 2000MHz Max, ROHS COMPLIANT PACKAGE-20
PTMA180402EL	INFINEON	获取价格	Wideband RF LDMOS Integrated Power Amplifier
PTMA180402EL-40W	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA180402FL	INFINEON	获取价格	Wideband RF LDMOS Integrated Power Amplifier
PTMA180402FL-40W	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA180402FLV1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1 Func,

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