Datasheet > PTMA210404FLV1

PTMA210404FLV1

更新时间： 2024-10-08 19:36:27

品牌	Logo	应用领域
英飞凌 - INFINEON		高功率电源射频微波
页数	文件大小	规格书
13页	462K
描述
Wide Band High Power Amplifier, 1800MHz Min, 2200MHz Max, GREEN, CERAMIC, H-34248-12, 12 PIN

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技术参数
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PTMA210404FLV1 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	构造：	COMPONENT
增益：	26 dB	最大输入功率 (CW)：	20 dBm
JESD-609代码：	e4	最大工作频率：	2200 MHz
最小工作频率：	1800 MHz	射频/微波设备类型：	WIDE BAND HIGH POWER
端子面层：	GOLD	最大电压驻波比：	10
Base Number Matches：	1

PTMA210404FLV1 数据手册

PTMA210404FL

Confidential, Limited Internal Distribution

Dual Wideband RF LDMOS Power Amplifier

40 W, 1800 – 2200 MHz

Description

The PTMA210404FL integrates two wideband, 20-watt, 2-stage

LDMOS integrated amplifiers into an open-cavity, ceramic package.

It is designed for use in cellular amplifier applications in the 1800-

2200 MHz frequency band. Manufactured with Infineon's advanced

LDMOS process, this amplifier offers excellent thermal performance

and superior reliability.

PTMA210404FL

Package H-34248-12

Features

Broadband Performance of Each Side

•

Designed for wide RF and modulation bandwidths

and low memory effects

V_DD= 28 V, I_DQ1= 60 mA, I_DQ2= 120 mA

•

Typical channel isolation = 26 dB

Typical single channel performance CW, 2018

MHz, 28 V

- Output power at P-1dB = 20 W

- Linear Gain = 30.5 dB

Gain

-5

- Efficiency = 54%

-10

-15

-20

-25

-30

•

Typical Doherty performance with six-carrier

TD-SCDMA signal, V = 28 V, I

= I

= 55

DQ1A

DQ1B

mA, I

= 110 mA, V

= 1.06 V, ƒ = 2018 MHz

DQ2B

G2A

- Average output power = 10 W

- Linear Gain = 27 dB

- Efficiency = 35%

- ACLR1 = –33 dBc

- ACLR2 = –34 dBc

Return Loss

2100

Side A

Side B

•

Capable of handling 10:1 VSWR @ 28 V, 50 W

(CW) output power

1800

1900

2000

Frequency (MHz)

2200

Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

High-performance, thermally-enhanced package,

Pb-free and RoHS compliant, with low-gold plating

RF Characteristics

Six-carrierTD-SCDMA Measurements in Doherty Circuit (tested in Infineon test fixture)

= 28 V, I = I = 55 mA, I = 110 mA, V = 1.05 V, P = 10 W average, ƒ = 2018 MHz, input PAR = 9.8 dB

DQ1A

DQ1B

DQ2B

GS2A

OUT

@ 0.01% CCDF

Characteristic

Gain

Symbol

Min

—

Typ

Max

—

Unit

Drain Efficiency

h_D

ACPR

Alt

—

Adjacent Channel Power Ratio

Alternate Channel Power Ratio

–33

–34

–30

–31

dBc

—

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 13

Rev. 04, 2009-06-16

12 3 4 5 6 7...13

中文翻译

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