Datasheet > PTMA210452EL

PTMA210452EL

更新时间： 2024-01-28 01:26:55

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器功率放大器
页数	文件大小	规格书
11页	380K
描述
Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz

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替代型号

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PTMA210452EL 数据手册

PTMA210452EL

PTMA210452FL

Confidential, Limited Internal Distribution

Wideband RF LDMOS Integrated Power Amplifier

45 W, 1900 – 2200 MHz

PTMA210452EL

Package H-33265-8

Description

The PTMA210452EL and PTMA210452FL are wideband, 45-watt,

2-stage, LDMOS integrated amplifiers intended for use in all typical

modulation formats from 1900 to 2200 MHz. These devices are offered

in thermally-enhanced ceramic packages with solder-friendly plating

for cool and reliable operation.

PTMA210452FL

Package H-34265-8

Features

Broadband Performance

V_DD= 28 V, I_DQ1= 200 mA, I_DQ1= 400 mA,

fixture tuned for 2110 – 2140 MHz

•

Designed for wide RF and modulation bandwidths

and low memory effects

•

Typical two-carrier WCDMA performance at

2140 MHz, 28 V

- Average output power = 3.2 W

- Linear Gain = 28 dB

- Efficiency = 10.5%

Gain

-5

-10

-15

-20

-25

-30

-35

- IMD3 = –47 dBc

•

Typical two-tone performance, 2140 MHz, 28 V

- Output power (PEP) = 45 W at IM3 = –30 dBc

- Efficiency = 32%

•

Capable of handling 10:1 VSWR @ 28 V, 45 W

(CW) output power

Return Loss

Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

1700 1800 1900 2000 2100 2200 2300 2400 2500

Frequency (MHz)

Thermally-enhanced packages, Pb-free and

RoHS compliant, with solder-friendly plating

RF Characteristics

Two-carrierWCDMA Measurements (tested in Infineon test fixture)

= 28 V, I = 200 mA (tuned for linearity), I = 450 mA (tuned for linearity & efficiency), P = 3.2 W average,

OUT

DQ1

DQ2

ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

—

Typ

–16

Max

–10

—

Unit

Input Return Loss

IRL

Gain

26.5

Drain Efficiency

h_D

10.5

–47

—

Intermodulation Distortion, 2-channel WCDMA

IMD

–43

—

dBc

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 06, 2009-09-01

12 3 4 5 6 7...11

中文翻译

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PTMA210452EL 替代型号

型号	品牌	替代类型	描述	数据表
PTMA180402FLV1	INFINEON	功能相似	Narrow Band High Power Amplifier, 1 Func,
PTMA210452FL	INFINEON	功能相似	Wideband RF LDMOS Integrated Power Amplifier

与PTMA210452EL相关器件

型号	品牌	获取价格	描述	数据表
PTMA210452EL-45W	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA210452ELV1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1 Func,
PTMA210452ELV1R250	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA210452ELV1XWSA1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1900MHz Min, 2200MHz Max, GREEN, CERAMIC, H-33265-8, 7 P
PTMA210452FL	INFINEON	获取价格	Wideband RF LDMOS Integrated Power Amplifier
PTMA210452FL-45W	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA210452FLV1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1 Func,
PTMA210452FLV1XWSA1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1900MHz Min, 2200MHz Max, GREEN, CERAMIC, H-34265-8, 7 P
PTMA401120	TI	获取价格	10-W, 36-V to 75-V INPUT, 1500-V ISOLATION, DC/DC CONVERTERS
PTMA401120A1AD	TI	获取价格	10-W, 36-V to 75-V INPUT, 1500-V ISOLATION, DC/DC CONVERTERS

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