Datasheet > PTMA210452ELV1R250

PTMA210452ELV1R250

更新时间： 2024-01-14 16:12:17

品牌	Logo	应用领域
英飞凌 - INFINEON		高功率电源射频微波
页数	文件大小	规格书
11页	190K
描述
Narrow Band High Power Amplifier,

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PTMA210452ELV1R250 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	射频/微波设备类型：	NARROW BAND HIGH POWER
Base Number Matches：	1

PTMA210452ELV1R250 数据手册

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PTMA210452EL

PTMA210452FL

Confidential, Limited Internal Distribution

Wideband RF LDMOS Integrated Power Ampliﬁer

45 W, 1900 – 2200 MHz

Description

The PTMA210452FL and PTMA210452FL are wideband,

45-watt, 2-stage, LDMOS integrated ampliﬁers intended for use

in all typical modulation formats from 1900 to 2200 MHz.These

devices are offered in thermally-enhanced ceramic packages

with solder-friendly plating for cool and reliable operation.

PTMA210452FL

Package H-34265-8

PTMA210452EL

Package H-33265-8

Features

•

Designed for wide RF and modulation bandwidths and

low memory effects

•

Typical two-carrier WCDMA performance at 2140 MHz,

28 V

- Average output power = 3.2 W

- Linear Gain = 28 dB

- Efﬁciency = 10.5%

- IMD3 = –47 dBc

•

Typical two-tone performance, 2140 MHz, 28 V

- Output power (PEP) = 45 W at IM3 = –30 dBc

- Efﬁciency = 32%

•

Capable of handling 10:1 VSWR @ 28 V, 45 W (CW)

output power

Integrated ESD protection. Meets HBM Class 1B (mini-

mum), per JESD22-A114F

Thermally-enhanced packages, Pb-free and RoHS com-

pliant, with solder-friendly plating

RF Characteristics

Two-carrier WCDMA Measurements (tested in Inﬁneon test ﬁxture)

= 28 V, I = 200 mA (tuned for linearity), I = 450 mA (tuned for linearity & efﬁciency), P = 3.2 W average,

OUT

DQ1

DQ2

ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

—

Typ

–16

Max

–10

—

Unit

Input Return Loss

IRL

Gain

26.5

Drain Efficiency

η_D

10.5

–47

—

Intermodulation Distortion, 2-channel WCDMA

IMD

–43

—

dBc

All published data at T

= 25°C unless otherwise indicated

*See Inﬁneon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. P07-A, 2011-11-10

12 3 4 5 6 7...11

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与PTMA210452ELV1R250相关器件

型号	品牌	获取价格	描述	数据表
PTMA210452ELV1XWSA1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1900MHz Min, 2200MHz Max, GREEN, CERAMIC, H-33265-8, 7 P
PTMA210452FL	INFINEON	获取价格	Wideband RF LDMOS Integrated Power Amplifier
PTMA210452FL-45W	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA210452FLV1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1 Func,
PTMA210452FLV1XWSA1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1900MHz Min, 2200MHz Max, GREEN, CERAMIC, H-34265-8, 7 P
PTMA401120	TI	获取价格	10-W, 36-V to 75-V INPUT, 1500-V ISOLATION, DC/DC CONVERTERS
PTMA401120A1AD	TI	获取价格	10-W, 36-V to 75-V INPUT, 1500-V ISOLATION, DC/DC CONVERTERS
PTMA401120A1AS	TI	获取价格	10-W, 36-V to 75-V INPUT, 1500-V ISOLATION, DC/DC CONVERTERS
PTMA401120A1AST	TI	获取价格	10-W, 36-V to 75-V INPUT, 1500-V ISOLATION, DC/DC CONVERTERS
PTMA401120A1AZ	TI	获取价格	10-W, 36-V to 75-V INPUT, 1500-V ISOLATION, DC/DC CONVERTERS

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