Datasheet > PTMA080302MV1

PTMA080302MV1

更新时间： 2024-02-28 23:22:59

品牌	Logo	应用领域
英飞凌 - INFINEON		高功率电源射频微波
页数	文件大小	规格书
11页	209K
描述
Wide Band High Power Amplifier, 700MHz Min, 1000MHz Max, 1 Func, GREEN, PLASTIC, MO-166, 20 PIN

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中文翻译

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技术参数
数据手册

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PTMA080302MV1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SOP20,.56
Reach Compliance Code：	compliant	风险等级：	5.67
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	31 dB	最大输入功率 (CW)：	16 dBm
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	20	最大工作频率：	1000 MHz
最小工作频率：	700 MHz	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOP20,.56	电源：	28 V
射频/微波设备类型：	WIDE BAND HIGH POWER	子类别：	RF/Microwave Amplifiers
表面贴装：	YES	Base Number Matches：	1

PTMA080302MV1 数据手册

PTMA080302M

Confidential, Limited Internal Distribution

Wideband RF LDMOS Integrated Power Ampliﬁer

30 W, 28 V, 700 – 1000 MHz

Description

The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS

integrated ampliﬁer intended for use in all typical modulation formats

from 700 to 1000 MHz.This device is offered in a 20-lead, thermally-

enhanced, overmolded package for cool and reliable operation.

PTMA080302M

Package PG-DSO-20-63

Features

Broadband Performance

V_DD= 28 V, I_DQ1= 120 mA, I_DQ2= 280 mA,

fixture tuned for 920 - 960 MHz

•

Designed for wide RF modulation bandwidths, and

low memory effects

On-chip matching, integrated input DC block,

50-ohm input and ~ 8-ohm output

Typical GSM/EDGE performance, 940 MHz, 28 V

- Output power = 15 W Avg.

- Linear gain = 31 dB

- Power added efﬁciency = 36%

- EVM at 15 W = 1.7 %

- ACPR at 400 kHz = –61 dBc

- ACPR at 600 kHz = –73 dBc

Gain

-5

•

Typical CW performance at 940 MHz, 28 V

-10

-15

-20

-25

- Output power at P

= 32 W

1dB

- Linear gain (1 W) = 31 dB

- Power added efﬁciency = 46%

Return Loss

•

Capable of handling 10:1 VSWR @ 28 V, 30 W

(CW) output power

Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

700

800

900

1000

1100

RoHS-compliant package

Frequency (MHz)

RF Characteristics

GSM/EDGE Speciﬁcations (not subject to production test—veriﬁed by design/characterization in Inﬁneon test ﬁxture)

= 28 V, I

= 120 mA, I

= 280 mA, ƒ = 920 to 960 MHz, P

= 15 W Avg.

DQ1

DQ2

OUT

Characteristic

Symbol

Min

—

Typ

Max

—

Unit

Gain

Power-added Efficiency

Error Vector Magnitude

PAE

EVM (RMS)

—

1.7

—

table continued next page

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet – DRAFT ONLY 1 of 11

Rev. 07, 2012-10-24

12 3 4 5 6 7...11

中文翻译

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与PTMA080302MV1相关器件

型号	品牌	获取价格	描述	数据表
PTMA080302MV1AUMA1	INFINEON	获取价格	Wide Band High Power Amplifier, 700MHz Min, 1000MHz Max, GREEN, PLASTIC, MO-166, 20 PIN
PTMA080304M	INFINEON	获取价格	Dual Wideband RF LDMOS Power Amplifier 30 W, 700-1000 MHz
PTMA180152M	INFINEON	获取价格	Narrow Band High Power Amplifier, 1800MHz Min, 2000MHz Max, ROHS COMPLIANT PACKAGE-20
PTMA180402EL	INFINEON	获取价格	Wideband RF LDMOS Integrated Power Amplifier
PTMA180402EL-40W	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA180402FL	INFINEON	获取价格	Wideband RF LDMOS Integrated Power Amplifier
PTMA180402FL-40W	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA180402FLV1	INFINEON	获取价格	Narrow Band High Power Amplifier, 1 Func,
PTMA180402FLV1R50	INFINEON	获取价格	Narrow Band High Power Amplifier,
PTMA180402FLV1XWSA1	INFINEON	获取价格	Narrow Band High Power Amplifier,

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