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PSMB032N08NS1 PDF预览

PSMB032N08NS1

更新时间: 2024-11-13 14:55:59
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
7页 668K
描述
TO-263

PSMB032N08NS1 数据手册

 浏览型号PSMB032N08NS1的Datasheet PDF文件第2页浏览型号PSMB032N08NS1的Datasheet PDF文件第3页浏览型号PSMB032N08NS1的Datasheet PDF文件第4页浏览型号PSMB032N08NS1的Datasheet PDF文件第5页浏览型号PSMB032N08NS1的Datasheet PDF文件第6页浏览型号PSMB032N08NS1的Datasheet PDF文件第7页 
PSMB032N08NS1  
80V N-Channel Enhancement Mode MOSFET  
3.4 mΩ  
Voltage  
Current  
Feature:  
80 V  
RDSON  
TO-263  
103.5 nC  
161 A  
QG (TYP)  
RDS(ON) Max, VGS@10V, ID@50A<3.4mΩ  
RDS(ON) Max, VGS@7V, ID@25A<5mΩ  
100% Avalanche Tested  
100% Rg Tested  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case: TO-263 package  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 1.38 grams  
Application  
BMS, BLDC. SMPS SR.  
Absolute Maximum Ratings (TA = 25 oC unless otherwise specified)  
PARAMETER SYMBOL  
LIMIT  
80  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
±20  
161  
102  
480  
38  
TC=25oC (Note 3)  
TC=100oC  
Continuous Drain Current  
A
ID  
Pulsed Drain Current  
TC=25oC  
A
A
IDM  
IAS  
Single Pulse Avalanche Current (Note 5)  
Single Pulse Avalanche Energy (Note 5)  
722  
156  
62.5  
mJ  
EAS  
TC=25oC  
TC=100oC  
Power Dissipation  
PD  
W
Operating Junction and Storage Temperature Range  
-55~150  
oC  
TJ,TSTG  
Thermal Characteristics  
PARAMETER  
SYMBOL  
MAXIMUM UNITS  
Junction-to-Case  
0.8  
oC/W  
RθJC  
Thermal Resistance  
Junction-to-Ambient (Note 4)  
62.5  
oC/W  
RθJA  
April 6,2022  
PSMB032N08NS1-REV.00  
Page 1  

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