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PPJT7600 PDF预览

PPJT7600

更新时间: 2024-11-05 12:04:15
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
9页 489K
描述
20V Complementary Enhancement Mode MOSFET . ESD Protected

PPJT7600 数据手册

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PPJT7600  
20V Complementary Enhancement Mode MOSFET – ESD Protected  
SOT-363  
Unit: inch(mm)  
20 / -20V  
1 / -0.7A  
Voltage  
Current  
Features  
Application  
Advanced Trench Process Technology  
Specially Designed for Switch Load, PWM Application, etc.  
ESD Protected  
Lead free in comply with EU RoHS 2011/65/EU directives.  
Green molding compound as per IEC61249 Std.  
(Halogen Free)  
Mechanical Data  
Case: SOT-363 Package  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0002 ounces, 0.006 grams  
Marking: T60  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL N-Ch LIMIT P-Ch LIMIT  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
ID  
20  
+8  
1
-20  
+8  
V
V
Continuous Drain Current  
-0.7  
-2.8  
A
(Note 4)  
Pulsed Drain Current  
IDM  
4
A
Ta=25oC  
Derate above 25oC  
350  
2.8  
mW  
mW/ oC  
oC  
Power Dissipation  
PD  
Operating Junction and Storage Temperature Range  
Thermal resistance  
TJ,TSTG  
-55~150  
Junction to Ambient (Note 3)  
oC/W  
RθJA  
357  
-
August 16,2013-REV.00  
Page 1  

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