Datasheet > PNA1601M

PNA1601M

更新时间： 2024-10-14 21:55:35

品牌	Logo	应用领域
松下 - PANASONIC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
4页	54K
描述
Silicon NPN Phototransistor

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中文翻译

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PNA1601M 数据手册

Phototransistors

PNA1601M (PN166)

Silicon NPN Phototransistor

Unit : mm

1.4±0.2

1.2±0.2

(0.4)

For optical control systems

2.6±0.2

C0.5 0.8

R0.55

Features

High sensitivity

Wide spectral sensitivity, suited for detecting various kinds of LEDs

Ultraminiature, thin side-view type package

2-0.7

2-0.45

0.15

2.0

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

I_C

Ratings

Unit

Collector to emitter voltage

Collector current

1: Collector

2: Emitter

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

T_opr

–25 to +65

–30 to +85

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

Conditions

min

typ

max

Unit

µA

deg.

µs

I_CEO

V_CE= 10V

0.2

Sensitivity to infrared emitters

Peak sensitivity wavelength

Acceptance half angle

Rise time

S_IR

V_CE= 10V, H = 15µW/cm²

λ_P

V_CE= 10V

850

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)= 5mA

R_L= 100Ω

t_r^*2

t_f^*2

Fall time

µs

Collector saturation voltage V_CE(sat)I_CE(L)= 10µA, H = 15µW/cm²

0.5

^*1Measurements were made using infrared light (λ = 940 nm) as a light source.

^*2Switching time measuring circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

12 3 4

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