Datasheet > PNA1605F(PN116)

PNA1605F(PN116)

更新时间： 2024-10-14 23:28:59

品牌	Logo	应用领域
其他 - ETC		晶体光电晶体管光电晶体管
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3页	56K
描述
PNA1605F (PN116) - Silicon NPN Phototransistor

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PNA1605F(PN116) 数据手册

Phototransistors

PNA1605F (PN116)

Silicon NPN Phototransistor

Unit : mm

4.5±0.15

3.5±0.15

2.1±0.15

For optical control systems

1.6±0.15

0.8±0.1

Features

High sensitivity

Wide directional sensitivity, matched to GaAs LEDs : θ = 70 deg.

(typ.)

Fast response : t_r,t_f= 8 µs (typ.)

Side-view type package

3-0.45±0.2

0.45±0.2

1.27

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_CBO

V_ECO

V_EBO

I_C

Ratings

Unit

2 3

1: Emitter

2: Collector

3: Base

Collector to emitter voltage

Collector to base voltage

Emitter to collector voltage

Emitter to base voltage

Collector current

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

100

T_opr

–25 to +85

–30 to +100

T_stg

Photo-

detectors

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

I_CEO

I_CE(L)

λ_P

Conditions

min

0.2

typ

max

Unit

µA

deg.

µs

V_CE= 10V

0.05

0.8

900

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Rise time

V_CE= 10V, L = 100 lx^*1

V_CE= 10V

t_r^*2

t_f^*2

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)= 1mA

R_L= 100Ω

Fall time

µs

Collector saturation voltage V_CE(sat)I_CE(L)= 1mA, L = 1000 lx^*1

0.3

0.6

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Note)The part number in the parenthesis shows conventional part number.

12 3

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