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PN4355 PDF预览

PN4355

更新时间: 2024-11-28 22:44:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管开关
页数 文件大小 规格书
2页 45K
描述
PNP General Purpose Amplifier

PN4355 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.18最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):75JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHz最大关闭时间(toff):400 ns
最大开启时间(吨):100 nsBase Number Matches:1

PN4355 数据手册

 浏览型号PN4355的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
PN4355  
MMBT4355  
C
E
TO-92  
C
B
SOT-23  
Mark: 81  
B
E
PNP General Purpose Amplifier  
This device is designed for use as a general purpose amplifier  
and switch requiring collector currents to 500 mA. Sourced  
from Process 67. See TN4033A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
60  
V
V
10  
V
Collector Current - Continuous  
800  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4355  
*MMBT4355  
PD  
Rθ  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°
C/W  
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
°
C/W  
Rθ  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

PN4355 替代型号

型号 品牌 替代类型 描述 数据表
PN4355LEADFREE CENTRAL

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