Datasheet > PN4355J05Z

PN4355J05Z

更新时间： 2024-11-30 05:12:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	463K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

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PN4355J05Z 数据手册

PN4355

MMBT4355

TO-92

SOT-23

Mark: 81

PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier

and switch requiring collector currents to 500 mA. Sourced

from Process 67. See TN4033A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

800

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN4355

*MMBT4355

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

350

2.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

200

357

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

PN4355/MMBT4355, Rev A

12 3 4 5 6 7...10

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