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PN4355J18Z PDF预览

PN4355J18Z

更新时间: 2024-11-29 15:48:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器驱动晶体管
页数 文件大小 规格书
10页 463K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

PN4355J18Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.65
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):75
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):400 ns
最大开启时间(吨):100 nsBase Number Matches:1

PN4355J18Z 数据手册

 浏览型号PN4355J18Z的Datasheet PDF文件第2页浏览型号PN4355J18Z的Datasheet PDF文件第3页浏览型号PN4355J18Z的Datasheet PDF文件第4页浏览型号PN4355J18Z的Datasheet PDF文件第5页浏览型号PN4355J18Z的Datasheet PDF文件第6页浏览型号PN4355J18Z的Datasheet PDF文件第7页 
PN4355  
MMBT4355  
C
E
TO-92  
C
B
SOT-23  
Mark: 81  
B
E
PNP General Purpose Amplifier  
This device is designed for use as a general purpose amplifier  
and switch requiring collector currents to 500 mA. Sourced  
from Process 67. See TN4033A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
60  
V
V
Collector-Base Voltage  
60  
5
Emitter-Base Voltage  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
800  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4355  
*MMBT4355  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor Corporation  
PN4355/MMBT4355, Rev A  

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