Datasheet > PN120SR

PN120SR

更新时间： 2024-11-24 10:39:27

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	176K
描述
Photo Transistor, 800nm, CERAMIC PACKAGE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PN120SR 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Phototransistors

PNZ120S (PN120S)

Silicon planar type

Unit: mm

For optical control systems

φ3.0 0.2

■ Features

• High sensitivity

• Wide directivity characteristics for easy use

• Fast response: t_r, t_f= 3 µs (typ.)

• Signal mixing capability using base pin

• Small size (φ3) ceramic package

φ0.3 0.05

φ0.45 0.05

■ Absolute Maximum Ratings T_a= 25°C

0.9 0.15

Parameter

Symbol

Rating

Unit

Collector-emitter voltage (Base open) V_CEO

Emitter-collector voltage (Base open) V_ECO

Collector current

I_C

°C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

1: Collector

2: Emitter

T_opr

T_stg

−25 to +85

−30 to +100

°C

■ Electrical-Optical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CE(L)1

I_CE(L)2

I_CEO

Conditions

V_CE= 10 V, L = 2 lx

Min

Typ

Max

Unit

µA

Photocurrent ^*

V_CE= 10 V, L = 500 lx

V_CE= 10 V

1.0

Dark current

500

Peak emission wavelength

Half-power angle

λ_p

V_CE= 10 V

800

The angle from which photocurrent

becomes 50%

Rise time ^*

t_r

t_f

V_CC= 10 V, I_CE(L)= 5 mA, R_L= 100 Ω

µs

Fall time ^*

Collector-emitter saturation voltage ^*

V_CE(sat)I_CE(L)= 1 mA, L = 1000 lx

0.2

0.5

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.

3. This device is designed be disregarded radiation.

5. 1: Source: Tungsten (color temperature 2856 K)

2: Rank classification

Rank

I_CE(L)1

I_CE(L)2

>24



3 to 16

5 typ.

10 to 30

6 typ.

8 typ.

1.0 to 5.0

4.0 to 9.0

>7.0

3: Switching time measurement circuit

Sig. in

V_CC

t_r: Rise time

t_f: Fall time

(Input pulse)

90%

10%

Sig. out

(Output pulse)

50 Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

Publication date: June 2007

SHE00014CED

中文翻译

下载PDF

与PN120SR相关器件

型号	品牌	获取价格	描述	数据表
PN120SRL	ETC	获取价格	PHOTOTRANSISTOR \| NPN \| 800NM PEAK WAVELENGTH \| 20M \| DOME-3.0
PN120SS	PANASONIC	获取价格	Photo Transistor, 800nm, CERAMIC PACKAGE-2
PN120SSL	ETC	获取价格	PHOTOTRANSISTOR \| NPN \| 800NM PEAK WAVELENGTH \| 20M \| DOME-3.0
PN121S	PANASONIC	获取价格	PN121S
PN121SQ	PANASONIC	获取价格	Photo Transistor, 800nm, 0.01A I(C), CERAMIC PACKAGE-2
PN121SR	PANASONIC	获取价格	Photo Transistor, 800nm, 0.01A I(C), CERAMIC PACKAGE-2
PN121SS	PANASONIC	获取价格	Photo Transistor, 800nm, 0.01A I(C), CERAMIC PACKAGE-2
PN121ST	PANASONIC	获取价格	Photo Transistor, 800nm, 0.01A I(C), CERAMIC PACKAGE-2
PN12-38HDR-L	PANDUIT	获取价格	RING TERMINALS 3 PC, NYLON INSULATED, HEAVY DUTY
PN123S	PANASONIC	获取价格	Photo Transistor, 800nm, 0.01A I(C), CERAMIC PACKAGE-2