Datasheet > PN100_06

PN100_06

更新时间： 2024-09-17 06:04:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
7页	193K
描述
NPN General Purpose Amplifier

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PN100_06 数据手册

PN100/PN100A/MMBT100/MMBT100A

NPN General Purpose Amplifier

•

This device is designed for general purpose amplifier

applications at collector currents to 300mA.

Sourced from process 10.

•

SOT-23

TO-92

1. Emitter 2. Base 3. Collector

Mark: PN100/PN100A

1. Base 2. Emitter 3. Collector

Mark: N1/N1A

Absolute Maximum Ratings* T_C=25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector current

V_CBO

V_EBO

I_C

6.0

- Continuous

500

°C

T_J, T_stg

Junction and Storage Temperature

-55 ~ +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics T_C=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

BV_CBO

BV_CEO

BV_EBO

I_CBO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage *

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emiitter Cutoff Current

Emitter Cutoff Current

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

V_CB= 60V

6.0

I_CES

V_CE= 40V

I_EBO

V_EB= 4V

On Characteristics

h_FE

DC Current Gain

I_C= 100µA, V_CE= 1.0V

100

100A

100

100A

240

100

300

100

I_C= 10mA, V_CE= 1.0V

450

600

I_C= 100mA, V_CE= 1.0V*

I_C= 150mA, V_CE= 5.0V *

100

100A

350

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I_C= 10mA, I_B= 1.0mA

I_C= 200mA, I_B= 20mA

0.2

0.4

I_C= 10mA, I_B= 1.0mA

I_C= 200mA, I_B= 20mA

0.85

1.0

Small Signal Characteristics

f_T

Current Gain Bandwidth Product

V_CE= 20V, I_C= 20mA

V_CB= 5.0V, f = 1.0MHz

250

MHz

C_obo

Output Capacitance

Noise Figure

4.5

I_C= 100µA, V_CE= 5.0V

R_G= 2.0kΩ, f = 1.0KHz

100

100A

5.0

4.0

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Rev. B1, August 2006

12 3 4 5 6 7

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