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PMH550UPE PDF预览

PMH550UPE

更新时间: 2024-11-16 11:14:15
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 269K
描述
20 V, P-channel Trench MOSFETProduction

PMH550UPE 数据手册

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PMH550UPE  
20 V, P-channel Trench MOSFET  
6 February 2023  
Product data sheet  
1. General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3  
(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
2. Features and benefits  
Low threshold voltage  
Very fast switching  
Trench MOSFET technology  
ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM  
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm  
3. Applications  
Relay driver  
High-speed line driver  
High-side load switch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
-20  
8
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-8  
-
V
ID  
VGS = -4.5 V; Tamb = 25 °C  
[1]  
-0.8  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = -4.5 V; ID = -0.6 A; Tj = 25 °C  
-
550  
640  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
 
 
 
 
 

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