Datasheet > PMH850UPE

PMH850UPE

更新时间： 2024-11-16 11:15:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	272K
描述
30 V, P-channel Trench MOSFETProduction

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PMH850UPE 数据手册

PMH850UPE

30 V, P-channel Trench MOSFET

6 February 2023

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3

(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM

Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm

3. Applications

•

Relay driver

High-speed line driver

High-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-30

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

I_D

V_GS= -4.5 V; T_amb= 25 °C

[1]

-0.6

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -4.5 V; I_D= -0.5 A; T_j= 25 °C

0.85

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...14

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