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PMEG4030EP_1

更新时间： 2024-11-18 11:48:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	93K
描述
3 A low VF MEGA Schottky barrier rectifier

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PMEG4030EP_1 数据手册

PMEG4030EP

3 A low V_FMEGA Schottky barrier rectiﬁer

Rev. 01 — 7 August 2009

Product data sheet

1. Product proﬁle

1.1 General description

Planar Maximum Efﬁciency General Application (MEGA) Schottky barrier rectiﬁer with an

integrated guard ring for stress protection, encapsulated in a SOD128 small and ﬂat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features

I Average forward current: I_F(AV)≤ 3 A

I Reverse voltage: V_R≤ 40 V

I Low forward voltage

I High power capability due to clip-bond technology

I AEC-Q101 qualiﬁed

I Small and ﬂat lead SMD plastic package

1.3 Applications

I Low voltage rectiﬁcation

I High efﬁciency DC-to-DC conversion

I Switch Mode Power Supply (SMPS)

I Reverse polarity protection

I Low power consumption applications

1.4 Quick reference data

Table 1.

Quick reference data

T_j= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward current

square wave;

δ = 0.5;

f = 20 kHz

[1]

_amb≤ 65 °C

_sp≤ 140 °C

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

490

200

I_F= 3 A

430

µA

V_R= 40 V

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.

12 3 4 5 6 7...13

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