Datasheet > PMEG4030ETP

PMEG4030ETP

更新时间： 2024-11-22 11:14:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	245K
描述
High temperature 40 V, 3 A low VF Schottky barrier rectifierProduction

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PMEG4030ETP 数据手册

PMEG4030ETP

High temperature 40 V, 3 A low VF Schottky barrier rectifier

20 February 2023

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 3 A

•

Reverse voltage: V_R≤ 40 V

Low forward voltage

High power capability due to clip-bonding technology

Small and flat lead SMD plastic package

High temperature T_j≤ 175 °C

Suitable for both reflow and wave soldering

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

Low power consumption applications

High temperature applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_sp

165 °C

≤

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

T_j= 25 °C

I_F= 3 A; T_j= 25 °C

V_R= 40 V; T_j= 25 °C

430

490

200

µA

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

CFP5 (SOD128)

[1] The marking bar indicates the cathode.

12 3 4 5 6 7...12

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