Datasheet > PMEG4010ETR-Q

PMEG4010ETR-Q

更新时间： 2024-11-19 11:13:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	261K
描述
High temperature 40 V, 1 A low VF Schottky barrier rectifierProduction

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PMEG4010ETR-Q 数据手册

PMEG4010ETR-Q

High temperature 40 V, 1 A low VF Schottky barrier rectifier

22 December 2022

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 1 A

•

Reverse voltage: V_R≤ 40 V

Low forward voltage

High power capability due to clip-bonding technology

Small and flat lead SMD plastic package

High temperature T_j≤ 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

1.4

Unit

forward current

T_sp= 165 °C

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_amb≤ [1]

140 °C

δ = 0.5; f = 20 kHz; square wave; T_sp

170 °C

≤

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

T_j= 25 °C

I_F= 1 A; T_j= 25 °C

430

490

µA

V_R= 40 V; t_p≤ 300 µs; δ ≤ 0.02;

T_j= 25 °C; pulsed

t_rr

reverse recovery time I_F= 0.5 A; I_R= 0.5 A; I_R(meas)= 0.1 A;

T_j= 25 °C

4.4

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

12 3 4 5 6 7...14

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