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PMC85XP

更新时间: 2024-11-29 12:32:19
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
15页 238K
描述
30 V P-channel MOSFET with pre-biased NPN transistor

PMC85XP 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020-6, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.72
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):2.6 A
最大漏源导通电阻:0.11 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL参考标准:IEC-60134
表面贴装:YES端子面层:TIN
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PMC85XP 数据手册

 浏览型号PMC85XP的Datasheet PDF文件第2页浏览型号PMC85XP的Datasheet PDF文件第3页浏览型号PMC85XP的Datasheet PDF文件第4页浏览型号PMC85XP的Datasheet PDF文件第5页浏览型号PMC85XP的Datasheet PDF文件第6页浏览型号PMC85XP的Datasheet PDF文件第7页 
6
-
PMC85XP  
30 V P-channel MOSFET with pre-biased NPN transistor  
0
2
0
2
N
F
D
15 May 2013  
Product data sheet  
1. General description  
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET  
technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium  
power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Trench MOSFET technology  
NPN transistor built-in bias resistors  
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  
Exposed drain pad for excellent thermal conduction  
3. Applications  
Charging switch for portable devices  
High-side load switch  
USB port overvoltage protection  
Power management in battery-driven portables  
Hard disk and computing power management  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
P-channel Trench MOSFET  
VDS  
VGS  
ID  
drain-source voltage  
Tj = 25 °C  
-
-
-
-
-30  
12  
V
V
A
gate-source voltage  
drain current  
-12  
-
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s  
[1]  
-3.4  
P-channel Trench MOSFET; static characteristics  
RDSon  
drain-source on-state  
resistance  
VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C  
-
85  
110  
mΩ  
NPN RET  
VCEO  
collector-emitter  
voltage  
Tamb = 25 °C; open base  
-
-
-
-
50  
V
IO  
output current  
100  
mA  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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