5秒后页面跳转
PMCA14UN PDF预览

PMCA14UN

更新时间: 2023-09-03 20:33:39
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
15页 281K
描述
12 V, N-channel Trench MOSFETProduction

PMCA14UN 数据手册

 浏览型号PMCA14UN的Datasheet PDF文件第2页浏览型号PMCA14UN的Datasheet PDF文件第3页浏览型号PMCA14UN的Datasheet PDF文件第4页浏览型号PMCA14UN的Datasheet PDF文件第5页浏览型号PMCA14UN的Datasheet PDF文件第6页浏览型号PMCA14UN的Datasheet PDF文件第7页 
PMCA14UN  
12 V, N-channel Trench MOSFET  
6 August 2020  
Product data sheet  
1. General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3  
(SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.  
2. Features and benefits  
Low threshold voltage  
Very fast switching  
Ultra small package: 0.96 × 0.96 × 0.24 mm  
Trench MOSFET technology  
3. Applications  
Relay driver  
Battery management  
Low-side load switch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
12  
8
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-8  
-
V
ID  
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s  
VGS = 4.5 V; ID = 5 A; Tj = 25 °C  
[1]  
14  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
-
13.2  
16  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), 4 layer copper, tin-plated and mounting pad for drain 6 cm2.  
 
 
 
 
 

与PMCA14UN相关器件

型号 品牌 获取价格 描述 数据表
PMCB60XN NEXPERIA

获取价格

30 V, N-channel Trench MOSFETProduction
PMCB60XNE NEXPERIA

获取价格

30 V, N-channel Trench MOSFETProduction
PMCDSPV035W1A DELTA

获取价格

Dual 24V/5V 100W 1 Phase
PMCDSPV035W3A DELTA

获取价格

Dual 24V/5V 100W 1 Phase
PMCDSPV050W1A DELTA

获取价格

Dual 24V/5V 100W 1 Phase
PMCDSPV050W3A DELTA

获取价格

Dual 24V/5V 100W 1 Phase
PMCDSPV075W1A DELTA

获取价格

Dual 24V/5V 100W 1 Phase
PMCDSPV075W3A DELTA

获取价格

Dual 24V/5V 100W 1 Phase
PMCDSPV100W1A DELTA

获取价格

Dual 24V/5V 100W 1 Phase
PMC-DSPV100W1A DELTA

获取价格

Dual 24V/5V 100W 1 Phase