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PMBF4416TRL PDF预览

PMBF4416TRL

更新时间: 2024-11-15 13:00:15
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
9页 99K
描述
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

PMBF4416TRL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.78
配置:SINGLE最小漏源击穿电压:30 V
FET 技术:JUNCTION最大反馈电容 (Crss):0.8 pF
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PMBF4416TRL 数据手册

 浏览型号PMBF4416TRL的Datasheet PDF文件第2页浏览型号PMBF4416TRL的Datasheet PDF文件第3页浏览型号PMBF4416TRL的Datasheet PDF文件第4页浏览型号PMBF4416TRL的Datasheet PDF文件第5页浏览型号PMBF4416TRL的Datasheet PDF文件第6页浏览型号PMBF4416TRL的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMBF4416; PMBF4416A  
N-channel field-effect transistor  
April 1995  
Product specification  
File under Discrete Semiconductors, SC07  

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