Datasheet > PM100RSE120_09

PM100RSE120_09

更新时间： 2024-11-18 12:23:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
9页	137K
描述
FLAT-BASE TYPE INSULATED PACKAGE

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中文翻译

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数据手册

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PM100RSE120_09 数据手册

MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOTWPOEWR EMROMDUOLDEUSL>ES>

PM100PRMS10E0R1S2E0120

FLAFTL-ABTA-SBEASTEYPTEYPE

INSIUNLSAUTLEADTEPDACPKAACGKAEGE

PM100RSE120

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

• 3φ 100A, 1200V Current-sense IGBT for 15kHz switching

• 50A, 1200V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-

current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 18.5/22kW class inverter application

• UL Recognized

Yellow Card No.E80276(N)

FileNo.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES

Dimensions in mm

135±1

120.5±0.5

4- φ5.5

MOUNTING

HOLES

24.1

Terminal code

39.7

LABEL

0.5 ±0.3

1. V^UPC

2. UP

11. VN1

12. Br

11 13 15

10 12 14 16

2 3

5 6

7 8 9

3. VUP1

4. VVPC

5. VP

13. UN

14. VN

15. WN

16. FO

3.22

10.16

2-2.54 2-2.54 2-2.54 6-2.54

67.4

6. VVP1

7. VWPC

8. WP

74.4

9. VWP1

10. VNC

10.5

φ2.54

2-2.54

3.22

0.64

4-R6

51.5

16- 0.64

Screwing depth

Min9.0

6-M5 NUTS

2-φ2.54

A : DETAIL

Jul. 2005

12 3 4 5 6 7...9

中文翻译

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