Datasheet > PJW1NA80

PJW1NA80

更新时间： 2024-11-10 01:24:19

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
8页	373K
描述
800V N-Channel MOSFET

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中文翻译

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数据手册

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PJW1NA80 数据手册

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80

800V N-Channel MOSFET

800 V

1 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V,I_D@0.5A<16Ω

 High switching speed

TO-220AB

SOT-223

 Improved dv/dt capability

 Low Gate Charge

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

TO-252

TO-251AB

Mechanical Data

 Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams

 TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams

 SOT-223 Approx. Weight : 0.043 ounces, 0.123grams

 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

TO-251AB

TO-220AB

TO-252

SOT-223

UNITS

V_DS

V_GS

I_D

800

+30

Gate-Source Voltage

Continuous Drain Current

0.3

1.2

Pulsed Drain Current

Single Pulse Avalanche Energy ^{(Note 1)}

I_DM

E_AS

W/ ^oC

T_C=25^oC

Power Dissipation

3.3

P_D

Derate above 25^oC

0.27

0.36

0.27

0.026

Operating Junction and

T_J,T_STG

-55~150

^oC

Storage Temperature Range

Typical Thermal resistance

^oC/W

R_θJC

R_θJA

3.68

110

2.78

62.5

3.68

110

Junction to Case

37.9 ^{(Note 4)}

Junction to Ambient

 Limited only By Maximum Junction Temperature

March 10,2014-REV.00

Page 1

12 3 4 5 6 7 8

中文翻译

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