Datasheet > PJW3N10A

PJW3N10A

更新时间： 2024-11-10 01:24:07

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
8页	398K
描述
100V N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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PJW3N10A 数据手册

PPJW3N10A

100V N-Channel Enhancement Mode MOSFET

SOT-223

2.2 A

Voltage

100 V

Current

Features

 R_DS(ON), V_GS@10V,I_D@2.2A<310mΩ

 R_DS(ON), V_GS@4.5V,I_D@1A<320mΩ

 Low On-Resistance

 Low input capacitance

 Lead free in compliance with EU RoHS 2011/65/EU

directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case : SOT-223 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.043 ounces, 0.123 grams

 Marking: W3N10A

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

100

+20

2.2

1.7

4.4

3.1

2.0

Gate-Source Voltage

T_A=25^oC

T_A=70^oC

Continuous Drain Current

I_D

(Note 1)

Pulsed Drain Current

Power Dissipation

I_DM

P_D

T_A=25^oC

T_A=70^oC

Operating Junction and Storage Temperature Range

T_J,T_STG

-55~150

40.3

^oC

Typical Thermal resistance

R_θJA

(Note 5)

Junction to Ambient, t≦10s

^oC/W

 Limited only By Maximum Junction Temperature

July 7,2015-REV.00

Page 1

12 3 4 5 6 7 8

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