Datasheet > PJT7800

PJT7800

更新时间： 2024-02-10 07:29:14

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	300K
描述
20V N-Channel Enhancement Mode MOSFET â ESD Protected

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中文翻译

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数据手册

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PJT7800 数据手册

PPJT7800

20V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-363

Unit: inch(mm)

20 V

Voltage

Current

Features

 RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ

 RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ

 RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected

 Lead free in comply with EU RoHS 2011/65/EU directives.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case : SOT-363 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0002 ounces, 0.006 grams

 Marking : T00

Fig.161

(TOP VIEW)

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

Continuous Drain Current

(Note 4)

Pulsed Drain Current

I_DM

T_a=25^oC

Derate above 25^oC

350

2.8

mW/ ^oC

^oC

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

357

July 10,2013-REV.00

Page 1

12 3 4 5 6

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