Datasheet > PJT7807

PJT7807

更新时间： 2024-01-23 14:06:50

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	285K
描述
20V P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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PJT7807 数据手册

PPJT7807

20V P-Channel Enhancement Mode MOSFET

SOT-363

Unit: inch(mm)

-20 V

-500mA

Voltage

Current

Features

 Low Voltage Drive (1.2V).

 Advanced Trench Process Technology

 Specially Designed for Load switch, PWM Application, etc.

 ESD Protected

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-363 Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0002 ounces, 0.006 grams

 Marking: T07

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

+10

Continuous Drain Current

-500

(Note 4)

Pulsed Drain Current

I_DM

-1000

350

T_a=25^oC

Derate above 25^oC

mW/ ^oC

^oC

Power Dissipation

P_D

2.8

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

357

March 6,2015-REV.00

Page 1

12 3 4 5 6

中文翻译

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