Datasheet > PJT7839

PJT7839

更新时间： 2024-01-01 11:06:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	281K
描述
60V P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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PJT7839 数据手册

PPJT7839

60V P-Channel Enhancement Mode MOSFET

SOT-363

Unit: inch(mm)

-60 V

-250mA

Voltage

Current

Features

 RDS(ON) , VGS@-10V, ID@-500mA<4Ω

 RDS(ON) , VGS@-4.5V, ID@-200mA<6Ω

 RDS(ON) , VGS@-2.5V, ID@-50mA<13Ω

 Advanced Trench Process Technology

 Specially Designed for Relay driver, Speed line drive, etc.

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std. (Halogen Free)

Mechanical Data

 Case: SOT-363 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0002 ounces, 0.006 grams

 Marking: T39

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-60

+20

Continuous Drain Current

Pulsed Drain Current

-250

I_DM

-1000

350

T_A=25^oC

Derate above 25^oC

mW/ ^oC

^oC

Power Dissipation

P_D

2.8

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

357

July 22,2015-REV.00

Page 1

12 3 4 5 6

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