Datasheet > PJL9458AL

PJL9458AL

更新时间： 2024-11-07 01:24:19

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	390K
描述
100V N-Channel Enhancement Mode MOSFET

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数据手册

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PJL9458AL 数据手册

PPJL9458AL

100V N-Channel Enhancement Mode MOSFET

SOP-8

100 V

7.0 A

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@7.0A<25mΩ

 RDS(ON) , VGS@4.5V, ID@5.0A<28.5mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOP-8 package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0029 ounces, 0.083 grams

 Marking: L9458AL

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

100

+20

7.0

T_A=25^oC

T_A=70^oC

Continuous Drain Current

Pulsed Drain Current ^{(Note 1)}

Power Dissipation

I_D

5.6

I_DM

P_D

T_A=25^oC

T_A=70^oC

2.5

1.6

Single Pulse Avalanche Energy ^{(Note 5)}

E_AS

8.5

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient, t≦10s ^{(Note 6)}

^oC/W

R_θJA

July 10,2015-REV.00

Page 1

12 3 4 5 6 7

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