Datasheet > PIMC31-Q

PIMC31-Q

更新时间： 2023-09-03 20:28:05

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	258K
描述
500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩProduction

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PIMC31-Q 数据手册

Nexperia

PIMC31-Q

500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

006aaa494

δ = 1

th(j-a)

0.75

0.33

(K/W)

0.50

0.20

0.10

0.05

0.02

0.01

- 5

- 4

- 3

- 2

- 1

(s)

FR4 PCB, single-sided, 35µm copper, tin-plated and standard footprint

Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_(BR)CBO

collector-base

breakdown voltage

I_C= 100 µA; I_E= 0 A; T_amb= 25 °C

I_C= 2 mA; I_B= 0 A; T_amb= 25 °C

V_CB= 50 V; I_E= 0 A; T_amb= 25 °C

[1]

V_(BR)CEO

I_CBO

collector-emitter

breakdown voltage

collector-base cut-off

current

100

0.5

0.72

µA

I_CEO

collector-emitter cut-off V_CE= 50 V; I_B= 0 A; T_amb= 25 °C

current

I_EBO

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

h_FE

DC current gain

V_CE= 5 V; I_C= 50 mA; T_amb= 25 °C

I_C= 50 mA; I_B= 2.5 mA; T_amb= 25 °C

[1]

V_CEsat

collector-emitter

300

saturation voltage

V_I(off)

off-state input voltage V_CE= 5 V; I_C= 100 µA

on-state input voltage V_CE= 0.3 V; I_C= 20 mA; T_amb= 25 °C

bias resistor 1 (input)

[1]

[2]

0.3

0.4

0.7

0.6

0.8

V_I(on)

1.4

1.3

kΩ

R2/R1

TR1 (NPN)

C_c

bias resistor ratio

collector capacitance

V_CB= 10 V; I_E= 0 A; i_e= 0 A; f = 1 MHz;

T_amb= 25 °C

TR2 (PNP)

C_c

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

[1] For the PNP transistor with negative polarity.

[2] See section "Test information" for resistor calculation and test conditions.

PIMC31-Q

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Product data sheet

20 April 2023

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