5秒后页面跳转
PHP30NQ15T PDF预览

PHP30NQ15T

更新时间: 2024-01-15 11:50:07
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 100K
描述
N-channel TrenchMOS transistor

PHP30NQ15T 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.71配置:Single
最大漏极电流 (Abs) (ID):29 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

PHP30NQ15T 数据手册

 浏览型号PHP30NQ15T的Datasheet PDF文件第2页浏览型号PHP30NQ15T的Datasheet PDF文件第3页浏览型号PHP30NQ15T的Datasheet PDF文件第4页浏览型号PHP30NQ15T的Datasheet PDF文件第5页浏览型号PHP30NQ15T的Datasheet PDF文件第6页浏览型号PHP30NQ15T的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
PHP30NQ15T, PHB30NQ15T  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
VDSS = 150 V  
ID = 29 A  
• Low thermal resistance  
g
RDS(ON) 63 mΩ  
s
GENERAL DESCRIPTION  
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device  
hasvery lowon-state resistance. Itisintended for usein dc to dc converters and general purposeswitching applications.  
The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB30NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404 (D2PAK)  
PIN  
DESCRIPTION  
tab  
tab  
1
2
gate  
drain1  
3
source  
drain  
2
tab  
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
150  
150  
± 20  
29  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C; VGS = 10 V  
Tmb = 100 ˚C; VGS = 10 V  
Tmb = 25 ˚C  
20  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
116  
150  
175  
Tmb = 25 ˚C  
- 55  
1 It is not possible to make connection to pin:2 of the SOT404 package  
August 1999  
1
Rev 1.000  

PHP30NQ15T 替代型号

型号 品牌 替代类型 描述 数据表
934055759127 NXP

功能相似

TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46,

与PHP30NQ15T相关器件

型号 品牌 获取价格 描述 数据表
PHP32N06L NXP

获取价格

N-channel enhancement mode field effect transistor
PHP32N06LT NXP

获取价格

N-channel enhancement mode field effect transistor
PHP33N10 NXP

获取价格

PowerMOS transistor
PHP33N10/B NXP

获取价格

TRANSISTOR UNIVERSAL MOSFET SOT
PHP33N10127 NXP

获取价格

TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Pur
PHP33NQ20T NXP

获取价格

N-channel TrenchMOS⑩ standard level FET
PHP33NQ20T NEXPERIA

获取价格

N-channel TrenchMOS standard level FETProduction
PHP33NQ20T,127 NXP

获取价格

PHP33NQ20T - N-channel TrenchMOS standard level FET TO-220 3-Pin
PHP34NQ10T NXP

获取价格

N-channel TrenchMOS transistor
PHP34NQ11T NXP

获取价格

N-channel TrenchMOS⑩ standard level FET