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PHE13005,127 PDF预览

PHE13005,127

更新时间: 2024-09-26 21:14:47
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 274K
描述
PHE13005

PHE13005,127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.29.00.75风险等级:7.15
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHE13005,127 数据手册

 浏览型号PHE13005,127的Datasheet PDF文件第2页浏览型号PHE13005,127的Datasheet PDF文件第3页浏览型号PHE13005,127的Datasheet PDF文件第4页浏览型号PHE13005,127的Datasheet PDF文件第5页浏览型号PHE13005,127的Datasheet PDF文件第6页浏览型号PHE13005,127的Datasheet PDF文件第7页 
PHE13005X  
Silicon diffused power transistor  
Rev. 02 — 20 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
High-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack  
plastic package for use in high frequency electronic lighting ballast applications  
1.2 Features and benefits  
„ Fast switching  
„ Isolated package  
„ High voltage capability of 700 V  
„ Low thermal resistance  
1.3 Applications  
„ Electronic lighting ballasts  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
IC  
collector current  
DC; see Figure 3, 1 and 2  
Th 25 °C; see Figure 4  
-
-
-
-
4
A
Ptot  
total power  
dissipation  
26  
W
VCESM  
collector-emitter  
peak voltage  
VBE = 0 V  
-
-
700  
V
Static characteristics  
hFE DC current gain  
IC = 1 A; VCE = 5 V;  
Th = 25 °C; see Figure 11  
12  
10  
20  
17  
40  
28  
VCE = 5 V; IC = 2 A;  
Th = 25 °C; see Figure 11  
 
 
 
 
 

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