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PF1015UDF12B PDF预览

PF1015UDF12B

更新时间： 2024-11-08 10:14:07
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
2页 34K
描述
ESD/EMI Filtering

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中文翻译

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PF1015UDF12B 数据手册

 浏览型号PF1015UDF12B的Datasheet PDF文件第2页 
SEMICONDUCTOR  
PF1015UDF12B  
TECHNICAL DATA  
ESD/EMI Filtering  
APPLICATION  
· I/O ESD protection for mobile handsets, notebook, PDAs, etc.  
· EMI filtering for data ports in cell phones, PDAs, notebook computers  
· EMI filtering for LCD, camera and chip-to-chip data lines  
C
A
E
1
6
GND PAD  
Pin 1  
FEATURES  
12  
7
D
· EMI/RFI filtering  
TOP VIEW  
BOTTOM VIEW  
· ESD Protection to IEC 61000-4-2 Level 4  
· Low insertion loss  
· Good attenuation of high frequency signals  
· Low clamping voltage  
DIM MILLIMETERS  
K
L
_
2.50 0.10  
A
B
C
D
E
F
+
_
1.35 + 0.10  
· Low operating and leakage current  
· Six elements in one package  
_
2.00 0.10  
+
_
0.20 + 0.05  
SIDE VIEW  
0.40  
_
0.40 + 0.10  
1,12 : Filter channel 1  
2,11 : Filter channel 2  
3,10 : Filter channel 3  
4,9 : Filter channel 4  
5,8 : Filter channel 5  
6,7 : Filter channel 6  
_
DESCRIPTION  
G
H
J
0.25 + 0.10  
0.20 Min  
PF1015UDF12B is an EMI filter array with electrostatic discharge (ESD) protection,  
which integrates six pi filters (C-R-C). These parts include ESD protection diodes on  
every pin, providing a very high level of protection for sensitive electronic components  
that may be subjected to electrostatic discharge.  
_
0.50 + 0.05  
0.127  
K
L
0.02+0.03/-0.02  
UDFN-12B  
The PF1015UDF12B provides the recommended line termination while implementing a  
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC  
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space  
occupation and a very thin package (0.4mm Pitch, 0.5mm height)  
MARKING  
Type Name  
℃
)
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
SYMBOL  
RATING  
100  
UNIT  
mW  
T3  
PR  
*PD  
Tj  
DC Power Per Resistor  
Lot No.  
Power Dissipation  
600  
Junction Temperature  
150  
℃
℃
RECOMMENEDED FOOTPRINT  
(dimensions in mm)  
Tstg  
Storage Temperature  
-55∼ 150  
* Total Package Power Dissipation  
EQUIVALENT CIRCUIT  
0.40  
0.30  
100Ω  
FILTERn*  
FILTERn*  
0.25  
1.40  
15pF  
15pF  
GND  
℃
)
ELECTRICAL CHARACTERISTICS (Ta=25  
CHARACTERISTIC  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Cutoff Frequency  
SYMBOL  
VRWM  
VBR  
TEST CONDITION  
-
MIN.  
TYP.  
-
MAX.  
UNIT  
V
-
6
5
-
It=1mA  
-
V
IR  
VRWM=3.3V  
-
-
1.0  
-
μA  
MHz  
Ω
fc-3dB  
RLINE  
VLine=0V, ZSOURCE=50Ω , ZLOAD=50Ω  
Between Input and Output  
-
300  
100  
45  
30  
Channel Resistance  
80  
36  
24  
120  
54  
36  
VLine=0V DC, 1MHz, Between I/O Pins and GND  
VLine=2.5V, 1MHz, Between I/O Pins and GND  
CLINE  
Capacitance  
pF  
2009. 5. 26  
Revision No : 2  
1/2  
12

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