SEMICONDUCTOR
PF1010UDF8B
TECHNICAL DATA
ESD/EMI Filter
APPLICATION
· I/O ESD protection for mobile handsets, notebook, PDAs, etc.
· EMI filtering for data ports in cell phones, PDAs, notebook computers
· EMI filtering for LCD, camera and chip-to-chip data lines
C
A
E
1
4
GND PAD
Pin 1
FEATURES
· EMI/RFI filtering
8
5
D
· ESD Protection to IEC 61000-4-2 Level 4
· Low insertion loss
BOTTOM VIEW
TOP VIEW
· Good attenuation of high frequency signals
· Low clamping voltage
DIM MILLIMETERS
_
1.70 0.10
+
A
B
C
D
E
F
_
1.35 + 0.10
K
· Low operating and leakage current
· Four elements in one package
_
1.20 0.10
+
L
_
0.20 + 0.05
0.40
SIDE VIEW
_
0.40 0.10
+
_
0.25 0.10
+
G
H
J
DESCRIPTION
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
0.20 Min
_
PF1010UDF8B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates four pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
0.50 + 0.05
K
L
0.127
0.02+0.03/-0.02
The PF1010UDF8B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
UDFN-8B
MARKING
Type Name
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
DC Power Per Resistor
SYMBOL
RATING
100
UNIT
mW
T2
PR
*PD
Tj
Lot No.
Power Dissipation
400
Junction Temperature
150
RECOMMENEDED FOOTPRINT
(dimensions in mm)
Tstg
Storage Temperature
-55∼ 150
* Total Package Power Dissipation
0.40
0.30
EQUIVALENT CIRCUIT
100Ω
FILTERn*
GND
FILTERn*
0.25
10pF
10pF
0.70
GND
℃
)
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
SYMBOL
VRWM
VBR
TEST CONDITION
-
MIN.
TYP.
-
MAX.
UNIT
V
-
6
5
-
It=1mA
-
V
IR
VRWM=3.3V
-
-
1.0
-
μA
MHz
Ω
fc-3dB
RLINE
VLine=0V, ZSOURCE=50Ω , ZLOAD=50Ω
Between Input and Output
-
150
100
30
20
Channel Resistance
80
24
16
120
36
24
VLine=0V DC, 1MHz, Between I/O Pins and GND
VLine=2.5V, 1MHz, Between I/O Pins and GND
CLINE
Line Capacitance
pF
2009. 5. 26
Revision No : 0
1/2
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