Datasheet > PESD27VV2BT-Q

PESD27VV2BT-Q

更新时间： 2024-11-03 11:12:07

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安世 - NEXPERIA		/
页数	文件大小	规格书
11页	263K
描述
Bidirectional double ESD protection diodeProduction

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PESD27VV2BT-Q 数据手册

PESD27VV2BT-Q

Bidirectional double ESD protection diode

22 May 2023

Product data sheet

1. General description

Bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the

damage caused by ESD and other transients.

2. Features and benefits

•

Reverse stand-off voltage: V_RWM= 27 V

•

Low clamping voltage: V_CL= 36 V at I_PPM= 3 A

ESD protection up to 30 kV (IEC 61000-4-2)

Ultra low leakage current: I_RM= 1 nA

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

ESD protection for low-speed interfaces in automotive, communication, consumer and computing

devices.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

[1]

[1] Measured from pin 1 or 2 to pin 3.

12 3 4 5 6 7...11

中文翻译

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