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PE25FGXX PDF预览

PE25FGXX

更新时间: 2024-11-07 21:54:15
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THYRISTOR MODULE

PE25FGXX 数据手册

 浏览型号PE25FGXX的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE  
PK 25FG  
UL;E76102M)  
Power Thyristor/Diode Module PK25FG series are designed for various rectifier circuits  
and power controls. For your circuit application, following internal connections and wide  
voltage ratings up to 1600V are available. and electrically isolated mounting base make  
your mechanical design easy.  
92�  
200�200�200�  
5�  
-φ6 0�  
T(AV)  
T(RMS)  
TSM  
39A, I  
I
25A, I  
700A  
di/dt 100A/μs  
Internal Configurations  
dv/dt 1000V/μs  
Applications)  
Various rectifiers  
M5× 10�  
8�  
K2  
G2  
4-11TAB  
K2  
G2  
3
2
1
K1G1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(K2)�  
(A2)�  
A1K2  
NAME PLATE  
AC/DC motor drives  
Heater controls  
Light dimmers  
PK  
PE  
0±02�  
K2  
3
2
1
K1G1  
(A2)�  
(K2)�  
A1K2  
Static switches  
Unit:  
A
PD  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
PK25FG40  
PD25FG40  
PE25FG40  
PK25FG80  
PD25FG80  
PE25FG80  
PK25FG120  
PD25FG120  
PE25FG120  
PK25FG160  
PD25FG160  
PE25FG160  
Symbol  
Item  
Unit  
VRRM  
VRSM  
VDRM  
400  
480  
400  
800  
960  
800  
1200  
1300  
1200  
1600  
1700  
1600  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak off-state Voltage  
Ratings  
Symbol  
Item  
Conditions  
Unit  
A
TAV)  
I
25  
Average On-state Current  
R.M.S. On-state Current  
Surge On-state Current  
Single phase, half wave, 180°conduction, Tc81℃  
TRMS)  
I
39  
A
Single phase, half wave, 180°conduction, Tc81℃  
1
TSM  
I
Z
A
Cycle, 50/60H , Peak Value, non-repetitive  
640/700  
2
2
2
2
I t  
Value for one cycle surge current  
2870  
A S  
I t  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
GAV)  
P
1
FGM  
I
3
10  
A
FGM  
V
Peak Gate Voltage (Forward)  
Peak Gate Voltage (Reverse)  
Critical Rate of Rise of On-state Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
100  
di/dt  
I 100mAV =/V di /dt0.1A/μs  
A/μs  
V
2
ISO  
V
A.C. 1minute  
2500  
Isolation Breakdown VoltageR.M.S.)  
Tj  
Operating Junction Temperature  
40 to +125  
40 to +125  
2.728)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM5Recommended Value 1.5-2.515-25)  
TerminalM5Recommended Value 1.5-2.515-25)  
Typical Value  
Mounting  
Torque  
Nm  
(㎏fB)  
Mass  
g
Electrical Characteristics  
Ratings  
5
Symbol  
Item  
Conditions  
DRM  
Unit  
mA  
mA  
V
DRM  
I
Repetitive Peak off-state Current,max  
Repetitive Peak Reverse Current,max  
D
Tj125℃,V V  
RRM  
I
D
DRM  
5
Tj125℃,V V  
TM  
V
T
1.6  
On-state Voltage,max  
Gate Trigger Current,max  
Gate Trigger Voltage,max  
Gate Non-Trigger Voltage,min  
Critical Rate of Rise of off-state Voltage,min  
I 75A  
GT  
I
D
T
50  
mA  
V
V 6VI 1A  
GT  
V
D
T
3
V 6VI 1A  
1
GD  
V
D
DRM  
0.25  
1000  
1.10  
V
Tj125℃,V =  
2V  
2
D
DRM  
dv/dt  
Tj125℃,V =/V  
V/μs  
/W  
3
Junction to case  
Rthj-c)*Thermal Impedance,max  
markThyristor and Diode part. No markThyristor part  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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