THYRISTOR MODULE
(
)
PD,PE
PK 25FG
UL;E76102(M)
Power Thyristor/Diode Module PK25FG series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy.
92.0�
20.0�20.0�20.0�
17.5�
2-φ6 .0�
●
●
T(AV)
T(RMS)
TSM
39A, I
I
25A, I
700A
di/dt 100A/μs
Internal Configurations
● dv/dt 1000V/μs
(Applications)
Various rectifiers
M5× 10�
2.8�
K2
G2
4-#110TAB
K2
G2
3
2
1
K1G1
(A2)�
(K2)�
3
2
1
A1K2
K1
(K2)�
(A2)�
A1K2
NAME PLATE
AC/DC motor drives
Heater controls
Light dimmers
PK
PE
80.0±0.2�
K2
3
2
1
K1G1
(A2)�
(K2)�
A1K2
Static switches
Unit:
A
PD
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
PK25FG40
PD25FG40
PE25FG40
PK25FG80
PD25FG80
PE25FG80
PK25FG120
PD25FG120
PE25FG120
PK25FG160
PD25FG160
PE25FG160
Symbol
Item
Unit
VRRM
VRSM
VDRM
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
*
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak off-state Voltage
*
Ratings
Symbol
Item
Conditions
Unit
A
T(AV)
I
25
*Average On-state Current
*R.M.S. On-state Current
*Surge On-state Current
Single phase, half wave, 180°conduction, Tc=81℃
T(RMS)
I
39
A
Single phase, half wave, 180°conduction, Tc=81℃
1
TSM
I
Z
A
/ Cycle, 50/60H , Peak Value, non-repetitive
640/700
2
2
2
2
I t
Value for one cycle surge current
2870
A S
*I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
G(AV)
P
1
FGM
I
3
10
A
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
V
RGM
V
5
V
1
G
D
DRM
G
100
di/dt
I =100mA,V =/V ,di /dt=0.1A/μs
A/μs
V
2
ISO
V
A.C. 1minute
2500
*Isolation Breakdown Voltage(R.M.S.)
Tj
*
Operating Junction Temperature
-40 to +125
-40 to +125
2.7(28)
2.7(28)
170
℃
℃
Tstg
*Storage Temperature
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Terminal(M5) Recommended Value 1.5-2.5(15-25)
Typical Value
Mounting
Torque
N・m
(㎏f・B)
Mass
g
■Electrical Characteristics
Ratings
5
Symbol
Item
Conditions
DRM
Unit
mA
mA
V
DRM
I
Repetitive Peak off-state Current,max
Repetitive Peak Reverse Current,max
D
Tj=125℃,V =V
RRM
I
D
DRM
5
*
Tj=125℃,V =V
TM
V
T
1.6
*On-state Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
I =75A
GT
I
D
T
50
mA
V
V =6V,I =1A
GT
V
D
T
3
V =6V,I =1A
1
GD
V
D
DRM
0.25
1000
1.10
V
Tj=125℃,V =
/
2V
2
D
DRM
dv/dt
Tj=125℃,V =/V
V/μs
℃/W
3
Junction to case
Rth(j-c)*Thermal Impedance,max
*mark:Thyristor and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com