Datasheet > 晶体管 > IGBT> PDMB150B12

PDMB150B12

更新时间： 2024-11-05 10:15:07

品牌	Logo	应用领域
NIEC		晶体晶体管双极性晶体管栅局域网
页数	文件大小	规格书
3页	120K
描述
IGBT MODULE Dual 150A 1200V

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中文翻译

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数据手册

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PDMB150B12 数据手册

IGBT MODULE Dual 150A 1200V

PDMB150B12

CIRCUIT

OUTLINEDRAWING

4- fasten- tab No 110

Dimension(mm)

Approximate Weight : 500g

MAXMUM RATINGS (Tc=25°C)

Item

Collector-Emitter Voltage

Gate - Emitter Voltage

Symbol

V_CES

V_GES

I_C

PDMB150B12

Unit

1200

+/ - 20

150

300

Collector Current

1 ms

I_CP

Collector Power Dissipation

Junction Temperature Range

Storage Temperature Range

Isolation Voltage Terminal to Base AC, 1 min.)

P_C

730

-40 to +150

-40 to +125

°C

T_stg

ISO

2500

Module Base to Heatsink

Bus Bar to Main Terminals

Mounting Torque

F_TOR

N•m

ELECTRICAL CHARACTERISTICS (Tc=25°C)

Characteristic

Collector-Emitter Cut-Off Current

Gate-Emitter Leakage Current

Collector-Emitter Saturation Voltage

Gate-Emitter Threshold Voltage

Input Capacitance

Symbol

I_CES

I_GES

V_CE(sat)

V_GE(th)

Cies

Test Condition

V_CE=1200V,V_GE=0V

V_GE=+/- 20V,V_CE=0V

I_C=150A,V_GE=15V

V_CE=5V,I_C=150mA

V_CE=10V,V_GE=0V,f=1MHz

Min.

4.0

Typ.

1.9

Max.

3.0

1.0

2.4

8.0

Unit

µA

12600

Rise Time

Turn-on Time

Fall Time

Turn-off Time

t_r

t_on

t_f

V_CC= 600V

0.25

0.40

0.25

0.80

0.45

0.70

0.35

1.10

R_L= 4 ohm

R_G= 3.6 ohm

V_GE= +/- 15V

Switching Time

µs

t_off

FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)

Item

Symbol

I_F

I_FM

Rated Value

Unit

1 ms

150

300

Forward Current

Characteristic

Peak Forward Voltage

Reverse Recovery Time

Symbol

Test Condition

I_F=150A,V_GE=0V

Min.

Typ.

1.9

0.2

Max.

2.4

0.3

Unit

µs

V_F

t_rr

I_F=150A,V_GE=-10V,di/dt=300A/µs

THERMAL CHARACTERISTICS

Characteristic

Symbol

Test Condition

Junction to Case

Min.

Typ.

Max.

0.16

0.32

Unit

IGBT

DIODE

Thermal Impedance

th(j-c)

°C/W

12 3

中文翻译

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