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PDM21096LL12ST PDF预览

PDM21096LL12ST

更新时间: 2024-10-28 19:54:35
品牌 Logo 应用领域
IXYS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 224K
描述
Standard SRAM, 512KX8, 120ns, CMOS, PDSO32

PDM21096LL12ST 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:120 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:2.7 V
认证状态:Not Qualified最大待机电流:0.00004 A
最小待机电流:1.5 V子类别:SRAMs
最大压摆率:0.035 mA标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUALBase Number Matches:1

PDM21096LL12ST 数据手册

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ADVANCED  
PDM21096LL  
512K x 8-Bit Low Power  
2.7 Volt  
Description  
Features  
The PDM21096LL is a very low power CMOS static  
RAM organized as 524,288 x 8 bits. Writing to this  
device is accomplished when the write enable (WE)  
and the chip enable (CE) inputs are both LOW.  
Reading is accomplished when WE remains HIGH  
and CE and OE are both LOW.  
High-speed access times  
Com’l: 100 and 120 ns  
Low power operation (typical)  
- PDM21096LL  
Active: 65 mW  
Standby: 7µW  
The PDM21096LL operates from a single +2.7V  
power supply and all the inputs and outputs are  
fully TTL- compatible. The device supports low data  
retention voltage for battery back-up operation with  
low current.  
Single +2.7V (±0.3V) power supply  
TTL-compatible inputs and outputs  
I/Os are 3.6V tolerant  
The PDM21096LL is available in a 32-pin plastic  
TSOP (I) and a 32-pin plastic STSOP (I).  
Low data retention voltage: 1.5V  
Packages  
Plastic TSOP (I) - T  
Plastic STSOP (I) - ST  
Functional Block Diagram  
A0  
Decoder  
Memory  
Addresses  
Matrix  
A18  
• • • •  
I/O0  
Input  
Column I/O  
Data  
Control  
I/O7  
CE  
Control  
WE  
OE  
Rev. 0.0 - 4/30/98  
1

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