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PDM21532LA85TI PDF预览

PDM21532LA85TI

更新时间: 2024-02-21 05:24:16
品牌 Logo 应用领域
IXYS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 260K
描述
Standard SRAM, 64KX16, 85ns, CMOS, PDSO44

PDM21532LA85TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSOP, TSOP44,.46,32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.92最长访问时间:85 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.7 V认证状态:Not Qualified
最大待机电流:0.00085 A最小待机电流:2.5 V
子类别:SRAMs最大压摆率:0.05 mA
最大供电电压 (Vsup):2.9 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

PDM21532LA85TI 数据手册

 浏览型号PDM21532LA85TI的Datasheet PDF文件第2页浏览型号PDM21532LA85TI的Datasheet PDF文件第3页浏览型号PDM21532LA85TI的Datasheet PDF文件第4页浏览型号PDM21532LA85TI的Datasheet PDF文件第5页浏览型号PDM21532LA85TI的Datasheet PDF文件第6页浏览型号PDM21532LA85TI的Datasheet PDF文件第7页 
PDM21532  
PRELIMINARY  
64K x 16 CMOS  
2.7V Static RAM  
1
2
Description  
Features  
The PDM21532 is a high-performance CMOS static  
RAM organized as 65,536 x 16 bits. The PDM21532  
features low power dissipation using chip enable  
(CE) and has an output enable input (OE) for fast  
memory access. Byte access is supported by upper  
and lower byte controls.  
High-speed access times  
- Com’l: 70, 85 and 100 ns  
- Ind: 85 and 100 ns  
Low power operation (typical)  
- PDM21532LA  
3
Active: 100 mW  
Standby: 150 µW  
The PDM21532 operates from a single 2.7V power  
supply and all inputs and outputs are fully TTL-  
compatible.  
High-density 64K x 16 architecture  
2.7V (±0.2V) power supply  
Fully static operation  
TTL-compatible inputs and outputs  
Output buffer controls: OE  
Data byte controls: LB, UB  
Packages:  
4
The PDM21532 is available in a 44-pin 400-mil plas-  
tic SOJ and a plastic TSOP (II) package for high-  
density surface assembly and is suitable for use in  
high-speed applications requiring high-speed  
storage.  
5
Plastic SOJ (400 mil) - SO  
Plastic TSOP (II) - T  
6
Functional Block Diagram  
Vcc  
8
Vss  
Memory  
A8-A0  
Cell  
Array  
256 x 128 x 32  
32K x 32  
9
Data  
Input/  
Output  
Buffer  
I/O15-I/O0  
Sense Amp  
10  
11  
12  
Column  
Decoder  
WE  
OE  
UB  
LB  
Control  
Logic  
Column  
Address  
Buffer  
Clock  
Generator  
CE  
A15-A9  
Rev. 1.0 - 5/01/98  
1

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