Datasheet > PD3S0230_08

PD3S0230_08

更新时间： 2024-11-21 12:20:07

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
3页	124K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PD3S0230_08 数据手册

PD3S0230

SURFACE MOUNT SCHOTTKY BARRIER DIODE

PowerDI^®323

Please click here to visit our online spice models database.

Features

Mechanical Data

•

Low Forward Voltage Drop

Fast Switching

•

Case: PowerDI^®323

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Matte Tin Finish annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band

Ultra-Small Surface Mount Package

PN Junction Guard Ring for Transient and ESD Protection

Lead Free Finish/RoHS Compliant (Note 1)

"Green" Molding Compound (No Br, Sb)

Ultra-Small Surface Mount Package

•

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.005 grams (approximate)

Top View

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

Value

Unit

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Continuous Forward Current

Repetitive Peak Forward Current

200

300

600

I_FRM

Non-Repetitive Peak Forward Surge Current

@ t_p< 10ms

I_FSM

Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Ambient Air (Note 2)

Symbol

Value

242

Unit

°C/W

°C

R_θ

Operating Temperature Range

Storage Temperature Range

-65 to +125

-65 to +150

T_J

T_STG

°C

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 3)

V_(BR)R

⎯

I_RS= 100μA

I_F= 0.1mA

I_F= 1mA

I_F= 10mA

I_F= 30mA

217

280

350

400

485

240

320

400

500

800

Forward Voltage

⎯

V_F

I_F= 100mA

Leakage Current (Note 3)

Total Capacitance

2.0

I_R

C_T

⎯

10.7

μA

V_R= 25V

⎯

V_R= 1.0V, f = 1.0MHz

I_F= 10mA through I_R= 10mA

to I_R= 1.0mA, R_L= 100Ω

Reverse Recovery Time

5.0

t_rr

⎯

Notes:

1. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.

2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website

at http://www.diodes.com/datasheets/ap02001.pdf. T_A= 25°C.

3. Short duration pulse test used to minimize self-heating effect.

PowerDI is a registered trademark of Diodes Incorporated.

1 of 3

www.diodes.com

July 2008

PD3S0230

Document number: DS30722 Rev. 7 - 2

12 3

中文翻译

下载PDF

与PD3S0230_08相关器件

型号	品牌	获取价格	描述	数据表
PD3S0230-7	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE PowerDI 323
PD3S120L	DIODES	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
PD3S120L_08	DIODES	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
PD3S120L-7	DIODES	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
PD3S120LQ	DIODES	获取价格
PD3S120LQ-7	DIODES	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, GREEN, ULTRA SMALL, PLASTIC
PD3S130H	DIODES	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323
PD3S130H_08	DIODES	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
PD3S130H-7	DIODES	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323
PD3S130HQ	DIODES	获取价格	Schottky ?Q? Portfolio for Automotive Applications

与PD3S0230_08相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

PD3S0230_08

PD3S0230_08 数据手册

与PD3S0230_08相关器件

与PD3S0230_08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PD3S0230_08

PD3S0230_08 数据手册

与PD3S0230_08相关器件

与PD3S0230_08相关文章

您还可以找

您在本页遇到什么问题？