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PD20010-E PDF预览

PD20010-E

更新时间: 2024-01-30 21:22:16
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 放大器光电二极管晶体管
页数 文件大小 规格书
13页 240K
描述
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PD20010-E 技术参数

生命周期:Active零件包装代码:SOT
包装说明:ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN针数:10
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:25 weeks风险等级:1.99
其他特性:ESD PROTECTION, HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:L BAND
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:165 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):59 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PD20010-E 数据手册

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PD20010-E  
RF power transistor, LdmoST plastic family  
N-channel enhancement-mode lateral MOSFETs  
Datasheet — production data  
Features  
Excellent thermal stability  
Common source configuration  
POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V  
Plastic package  
ESD protection  
PowerSO-10RF  
(formed lead)  
In compliance with the 2002/95/EC European  
directive  
Description  
The PD20010-E is a common source N-Channel,  
enhancement-mode lateral field-effect RF power  
transistor. It is designed for high gain, broadband  
commercial and industrial applications. It  
operates at 13.6 V in common source mode at  
frequencies of up to 1 GHz. PD20010-E boasts  
the excellent gain, linearity and reliability of ST’s  
latest LDMOS technology mounted in the first true  
SMD plastic RF power package, PowerSO-10RF.  
PD20010-E’s superior linearity performance  
makes it an ideal solution for car mobile radio.  
PowerSO-10RF  
(straight lead)  
Figure 1.  
Pin connection  
Source  
The PowerSO-10 plastic package, designed to  
offer high reliability, is the first ST JEDEC  
approved, high power SMD package. It has been  
specially optimized for RF needs and offers  
excellent RF performances and ease of assembly.  
Drain  
Gate  
Table 1.  
Device summary  
Order codes  
Packages  
Packing  
PD20010-E  
PD20010S-E  
PD20010TR-E  
PD20010STR-E  
PowerSO-10RF (formed lead)  
PowerSO-10RF (straight lead)  
PowerSO-10RF (formed lead)  
PowerSO-10RF (straight lead)  
Tube  
Tube  
Tape and reel  
Tape and reel  
May 2012  
Doc ID 15514 Rev 2  
1/13  
This is information on a product in full production.  
www.st.com  
13  

PD20010-E 替代型号

型号 品牌 替代类型 描述 数据表
PD20010TR-E STMICROELECTRONICS

完全替代

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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