Datasheet > PD20010TR-E

PD20010TR-E

更新时间： 2022-02-26 11:24:16

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	240K
描述
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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PD20010TR-E 数据手册

PD20010-E

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Datasheet — production data

Features

■ Excellent thermal stability

■ Common source configuration

■ P_OUT= 10 W with 11 dB gain @ 2 GHz / 13.6 V

■ Plastic package

■ ESD protection

PowerSO-10RF

(formed lead)

■ In compliance with the 2002/95/EC European

directive

Description

The PD20010-E is a common source N-Channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 13.6 V in common source mode at

frequencies of up to 1 GHz. PD20010-E boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD20010-E’s superior linearity performance

makes it an ideal solution for car mobile radio.

PowerSO-10RF

(straight lead)

Figure 1.

Pin connection

Source

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Drain

Gate

Table 1.

Device summary

Order codes

Packages

Packing

PD20010-E

PD20010S-E

PD20010TR-E

PD20010STR-E

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Tube

Tape and reel

May 2012

Doc ID 15514 Rev 2

1/13

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...13

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