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PBYR1040X PDF预览

PBYR1040X

更新时间: 2024-11-18 22:09:07
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
6页 45K
描述
Rectifier diodes Schottky barrier

PBYR1040X 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.59 V
JESD-30 代码:R-PSFM-T2湿度敏感等级:1
最大非重复峰值正向电流:110 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):225
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PBYR1040X 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1045F, PBYR1045X series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Isolated mounting tab  
VR = 40 V/ 45 V  
a
k
1
IF(AV) = 10 A  
2
VF 0.59 V  
GENERAL DESCRIPTION  
Schottky rectifier diodes in a plasticenvelope withelectrically isolated mounting tab. Intended for useas output rectifiers  
in low voltage, high frequency switched mode power supplies.  
The PBYR1045F series is supplied in the SOD100 package.  
The PBYR1045X series is supplied in the SOD113 package.  
PINNING  
SOD100  
SOD113  
PIN  
DESCRIPTION  
cathode  
anode  
isolated  
case  
case  
1
2
tab  
1
2
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR10  
PBYR10  
40F  
45F  
40X  
45X  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
40  
45  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
40  
40  
45  
45  
VR  
T
hs 95 ˚C  
-
-
V
A
IF(AV)  
Average rectified forward  
current  
square wave; δ = 0.5; Ths 112 ˚C  
square wave; δ = 0.5; Ths 112 ˚C  
10  
20  
IFRM  
IFSM  
Repetitive peak forward  
current  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
100  
110  
A
A
current  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current  
-
-
1
A
Operating junction  
temperature  
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
July 1998  
1
Rev 1.200  

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