PBYR1045CTD

更新时间： 2024-11-06 22:09:07

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
5页	42K
描述
Rectifier diodes Schottky barrier

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PBYR1045CTD 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR1045CTD series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 40 V/ 45 V

I_O(AV)= 10 A

V_F≤ 0.6 V

GENERAL DESCRIPTION

PINNING

SOT428

Dual schottky rectifier diodes

intended for use as output rectifiers

in low voltage, high frequency

switched mode power supplies.

DESCRIPTION

anode 1

cathode¹

tab

The PBYR1045CTD series is

supplied in the SOT428 surface

mounting package.

anode 2

cathode

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYR10

40CTD

45CTD

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_mb≤ 108 ˚C

I_O(AV)

Average rectified forward

current (both diodes

conducting)

square wave; δ = 0.5;

T_mb≤ 127 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5;

T_mb≤ 127 ˚C

Non-repetitive peak forward t = 10 ms

100

110

current per diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

1 it is not possible to make connection to pin 2 of the SOT428 package

July 1998

Rev 1.200

12 3 4 5

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