Datasheet > PALCE22V10

PALCE22V10

更新时间： 2024-11-09 21:54:59

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		闪存
页数	文件大小	规格书
13页	350K
描述
Flash-erasable Reprogrammable CMOS PAL Device

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中文翻译

获取价格

数据手册

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PALCE22V10 数据手册

PALCE22V10 is

a replacement device for

PALC22V10, PALC22V10B, and PALC22V10D.

USE ULTRA37000^TMFOR

ALL NEW DESIGNS

PALCE22V10

Flash-erasable Reprogrammable

CMOS PAL^®Device

• DIP, LCC, and PLCC available

Features

— 5 ns commercial version

4 ns t_CO

• Low power

— 90 mA max. commercial (10 ns)

— 130 mA max. commercial (5 ns)

3 ns t_S

5 ns t_PD

181-MHz state machine

• CMOS Flash EPROM technology for electrical erasabil-

ity and reprogrammability

— 10 ns military and industrial versions

7 ns t_CO

6 ns t_S

• Variable product terms

10 ns t_PD

110-MHz state machine

— 2 ×(8 through 16) product terms

• User-programmable macrocell

— Output polarity control

— 15-ns commercial, industrial, and military versions

— 25-ns commercial, industrial, and military versions

• High reliability

— Individually selectable for registered or combina-

torial operation

— Proven Flash EPROM technology

• Up to 22 input terms and 10 outputs

— 100% programming and functional testing

Logic Block Diagram (PDIP/CDIP)

CP/I

PROGRAMMABLE

AND ARRAY

(132 X 44)

Reset

Macrocell

Preset

I/O

PLCC

Top View

LCC

Top View

Pin Configuration

2827 26

3 2 1 282726

25 I/O

24 I/O

23 I/O

I/O

N/C

21 I/O

20 I/O

19 I/O

I/O

121314 1516 1718

12131415161718

Cypress Semiconductor Corporation

Document #: 38-03027 Rev. *B

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Revised April 9, 2004

12 3 4 5 6 7...13

中文翻译

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