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PACDN045Y6/T PDF预览

PACDN045Y6/T

更新时间： 2024-11-12 07:47:15
品牌 Logo 应用领域
CALMIRCO 局域网光电二极管
页数 文件大小 规格书
2页 110K
描述
Trans Voltage Suppressor Diode, Unidirectional, 4 Element, Silicon, SOT-23, 6 PIN

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PACDN045Y6/T 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOT-23
包装说明：R-PDSO-G6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.75
配置：COMMON ANODE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-G6
JESD-609代码：e0元件数量：4
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性：UNIDIRECTIONAL
最大功率耗散：0.225 W认证状态：Not Qualified
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：30

PACDN045Y6/T 数据手册

 浏览型号PACDN045Y6/T的Datasheet PDF文件第2页 
PACDN042/043/  
044/045/046  
CALIFORNIA MICRO DEVICES  
TRANSIENT VOLTAGE SUPPRESSOR ARRAYS  
Features  
Applications  
• 2, 3, 4, 5, or 6 transient voltage suppressors in a single  
surface-mount package.  
• ESD protection of PC ports, e.g. USB port.  
• Protection of interface ports or IC pins  
which are exposed to high levels of ESD.  
• Compact SMT packages save board space and ease  
layout in space critical applications compared to  
discrete solutions.  
• In-system ESD protection to 20kV contact discharge  
per IEC 61000-4-2 International Standard.  
Product Description  
The PACDN042, PACDN043, PACDN044, PACDN045, and PACDN046 are transient voltage suppressor arrays that provide a  
very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The  
devices are designed and characterized to safely dissipate ESD strikes at levels well beyond the maximum requirements set  
forth in the IEC 61000-4-2 International Standard (Level 4, 8kV contact discharge). All pins are rated at 20kV ESD using the  
IEC 61000-4-2 contact discharge method.  
Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected for contact  
discharges to greater than 30kV.  
Schematic Configurations  
S TA N D A R D S P E C IF IC A TIO N S  
Param eter  
Min.  
Typ.  
Max.  
Unit  
Reverse Stand-off Voltage, I = 10uA  
Signal Clamp Voltage:  
5.5  
V
Positive Clamp, 10mA  
5.6  
6.8  
8.0  
V
V
Negative Clamp, 10mA  
-1.2  
-0.8  
-0.4  
In-system ESD withstand voltage*:  
Human Body Model (MIL-STD-883D, method 3015)  
IEC 61000-4-2, contact discharge method  
± 30  
± 20  
kV  
kV  
V
Clamping voltage during ESD discharge  
MIL-STD-883D (Method 3015), 8kV  
Capacitance @ 2.5V dc, 1 MHz  
Temperature Range:  
Positive  
Negative  
12  
-8  
V
30  
pF  
Operating  
-20  
-65  
85  
150  
0.225  
0.5  
°C  
Storage  
Package Power Rating: SOT23, SOT23-5, SOT23-6,  
SOT-143, TSSOP, MSOP  
W
W
* ESD applied between channel pin and ground, one at a time. All other channels are open. All GND pins grounded.  
This parameter is guaranteed by design and characterization..  
Note: ‘GND’ in this document refers to the lower supply voltage.  
C0290498D  
© 2000 California Micro Devices Corp. All rights reserved.  
4/00  
215 Topaz Street, Milpitas, California 95035  
Tel: (408) 263-3214  
Fax: (408) 263-7846  
www.calmicro.com  
1
12

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