Datasheet > PA110BEA

PA110BEA

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	342K
描述
PDFN 3x3

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中文翻译

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数据手册

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PA110BEA 数据手册

PA110BEA

PDFN 3x3P

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

8.5A

105mΩ

G. GATE

D. DRAIN

S. SOURCE

100% UIS Tested

100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

100

±20

8.5

5.4

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

3.5

2.8

5.9

17.5

Avalanche Current⁴

Avalanche Energy⁴

I_AS

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Power Dissipation

Power Dissipation³

P_D

7.3

3.1

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient²

t ≦10s

Junction-to-Ambient²

Steady-State

°C / W

R_JA

Junction-to-Case

6.8

Steady-State

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

⁴V_DD= 50V , Rg = 25Ω , L = 1mH , starting T_J= 25°C.

K-46-5

REV 1.1

12 3 4 5

中文翻译

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