Datasheet > PA110BL

PA110BL

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	240K
描述
SOT-223

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中文翻译

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数据手册

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PA110BL 数据手册

PA110BL

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

SOT-223

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

110mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

T_A= 25 °C

3.2

Continuous Drain Current

I_D

T_A= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

6.6

L = 0.1mH

T_A= 25 °C

T_A= 100 °C

E_AS

2.2

2.5

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

R_JA

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

100

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

1.8

V_DS= 0V, V_GS= ±20V

±100 nA

V_DS= 80V, V_GS= 0V

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 80V, V_GS= 0V, T_J= 125 °C

REV1.0

D-33-4

12 3 4

中文翻译

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