Datasheet > PA110HEA

PA110HEA

更新时间： 2024-11-21 17:15:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	308K
描述
PDFN 3x3

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中文翻译

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数据手册

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PA110HEA 数据手册

Dual N-Channel Enhancement Mode

Field Effect Transistor

PA110HEA

NIKO-SEM

PDFN 3x3P

Halogen-Free & Lead-Free

D1 D1 D2 D2

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

8.4A

110mΩ

S1 G1 S2

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

±20

8.4

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

5.3

Continuous Drain Current

I_D

2.4

1.9

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

6.1

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

7.3

Power Dissipation

P_D

1.5

0.9

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient²

°C / W

Junction-to-Case

6.8

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C

K-50-1

REV1.1

12 3 4 5

中文翻译

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