Datasheet > P6SMB82CA-E3

P6SMB82CA-E3

更新时间： 2024-12-01 01:10:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	96K
描述
Surface Mount TRANSZORB Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P6SMB82CA-E3 数据手册

P6SMB Series

Vishay General Semiconductor

www.vishay.com

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate

(duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-214AA (SMB)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM

5.8 V to 459 V

6.8 V to 540 V

6.8 V to 220 V

600 W

TYPICAL APPLICATIONS

_BR(uni-directional)

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

_BR(bi-directional)

P_PPM

P_D

5.0 W

_FSM(uni-directional only)

100 A

MECHANICAL DATA

T_Jmax.

150 °C

Case: DO-214AA (SMB)

Polarity

Uni-directional, bi-directional

DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant and commercial grade

Base P/NHE3 - RoHS compliant and AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

Package

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. P6SMB10CA).

Electrical characteristics apply in both directions.

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

600

UNIT

Peak power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

Power dissipation on infinite heatsink at T_A= 50 °C

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

See next table

5.0

P_D

I_FSM

100

T_J, T_STG

- 65 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2.

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 14-Dec-12

Document Number: 88370

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与P6SMB82CA-E3相关器件

型号	品牌	获取价格	描述	数据表
P6SMB82CA-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6SMB82CA-E3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB82CA-E3/55	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6SMB82CA-E3/5B	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB82CAHE3/52	VISHAY	获取价格	TVS DIODE 70.1V 113V DO214AA
P6SMB82CAHE3/5B	VISHAY	获取价格	TVS DIODE 70.1V 113V DO214AA
P6SMB82CA-M3/52	VISHAY	获取价格	TVS DIODE 70.1V 113V DO214AA
P6SMB82CA-M3/5B	VISHAY	获取价格	TVS DIODE 70.1V 113V DO214AA
P6SMB82CAQ	YANGJIE	获取价格	SMB
P6SMB82CA-Q1	ANBON	获取价格	SMB

与P6SMB82CA-E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB82CA-E3

P6SMB82CA-E3 数据手册

与P6SMB82CA-E3相关器件

与P6SMB82CA-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB82CA-E3

P6SMB82CA-E3 数据手册

与P6SMB82CA-E3相关器件

与P6SMB82CA-E3相关文章

您还可以找

您在本页遇到什么问题？